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November 2013
FDB029N06
N-Channel PowerTrench ? MOSFET
60 V, 193 A, 3.1 m Ω
Features
? R DS(on) = 2.4 m Ω (Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor ’s advanced PowerTrench ? process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor Drives and Uninterruptible Power Supplies
? Renewable System
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB029N06
60
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±20
193
136
120
V
A
I DM
Drain Current
- Pulsed
(Note 1)
772
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
1434
6
231
1.54
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDB029N06
Unit
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max.
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
0.65
62.5
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FDB029N06 Rev. C2
1
www.fairchildsemi.com
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